DMG4822SSD-13【PDF 2/7 页】MOSFET DL N-CH 30V 10A SO-8

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DMG4822SSD

Maximum Ratings

@T A = 25°C unless otherwise specified

Drain-Source Voltage

Gate-Source Voltage

Characteristic

Symbol

V DSS

V GSS

Value

30

±25

Units

V

V

Continuous Drain Current (Note 5) V GS = 10V

Pulsed Drain Current (Note 6)

Avalanche Current (Note 7 & 8)

Repetitive Avalanche Energy L= 0.3mH (Note 7 & 8)

Steady

State

T A = +25°C

T A = +85°C

I D

I DM

I AR

E AR

10

6.6

60

1.68

12.8

A

A

A

mJ

Thermal Characteristics

@T A = 25°C unless otherwise specified

Characteristic

Total Power Dissipation (Note 5)

Thermal Resistance, Junction to Ambient (Note 5)

Operating and Storage Temperature Range

Symbol

P D

R θ JA

T J, T STG

Value

1.42

88.4

-55 to +150

Units

W

°C/W

°C

Electrical Characteristics @T A = 25°C unless otherwise specified

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 9)

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-Source Leakage

BV DSS

I DSS

I GSS

30

-

-

-

-

-

-

1

±100

V

μ A

nA

V GS = 0V, I D = 250 μ A

V DS = 30V, V GS = 0V

V GS = ±25V, V DS = 0V

ON CHARACTERISTICS (Note 9)

Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transfer Admittance

Diode Forward Voltage

V GS(th)

R DS (ON)

|Y fs |

V SD

1

-

-

-

-

-

13.4

19.5

20

0.4

3

20

31

-

1.0

V

m ?

mS

V

V DS = V GS , I D = 250 μ A

V GS = 10V, I D = 8.5A

V GS = 4.5V, I D = 6A

V DS = 5V, I D = 8.5A

V GS = 0V, I S = 1A

DYNAMIC CHARACTERISTICS (Note 10)

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Gate resistance

Total Gate Charge (V GS = 4.5V)

Total Gate Charge (V GS = 10V)

Gate-Source Charge

Gate-Drain Charge

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

C iss

C oss

C rss

R g

Q g

Q g

Q gs

Q gd

t D(on)

t r

t D(off)

t f

-

-

-

-

-

-

-

-

-

-

478.9

96.7

61.4

1.1

5

10.5

1.8

1.6

2.9

7.9

14.6

3.1

-

-

-

-

-

-

-

-

-

-

-

pF

pF

pF

?

nC

nC

nC

nC

ns

ns

ns

ns

V DS = 16V, V GS = 0V,

f = 1MHz

V DS = 0V, V GS = 0V,f = 1MHz

V GS = 10V, V DS = 15V,

I D =8.5A

V DS = 15V, V GS = 10V,

R L = 1.8 ? , R G = 3 ? ,

Notes:

5. Device mounted on FR-4 PCB, with minimum recommended pad layout.

6. Device mounted on minimum recommended pad layout test board, 10 μ s pulse duty cycle = 1%

7. Repetitive rating, pulse width limited by junction temperature.

8. I AR and E AR rating are based on low frequency and duty cycles to keep T j =+25°C

9. Short duration pulse test used to minimize self-heating effect.

10. Guaranteed by design. Not subject to product testing.

DMG4822SSD

Document number: DS35403 Rev. 2 - 2

2 of 7

www.diodes.com

February 2014

? Diodes Incorporated

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